Hall electron mobility versus N spatial distribution in III-V-N systems

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 532-537

  Hashimoto, A ^a   Yamaguchi, T ^a   Suzuki, T ^a   Yamamoto, A ^a  

^a UNIVERSITY OF FUKUI   (Japan)

Author keywords

A3. Molecular beam epitaxy; B1. Gallium compounds; B2. Semiconducting quaternary alloys; B3. Solar cells

Indexed keywords

MOLECULAR BEAM EPITAXY; NITROGEN; PARAMETER ESTIMATION; SCATTERING; SEMICONDUCTING GALLIUM COMPOUNDS; SOLAR CELLS;

HALL ELECTRON MOBILITY; NEXT-GENERATION ULTRA-HIGH-EFFICIENCY; SEMICONDUCTING QUATERNARY ALLOYS; SPATIAL DISTRIBUTION;

ELECTRON MOBILITY;

EID: 18444405252     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.115     Document Type: Conference Paper

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