High-field scanning probe lithography in hexadecane: Transitioning from field induced oxidation to solvent decomposition through surface modification

Advanced Materials

Volumn 19, Issue 21, 2007, Pages 3570-3573

  Suez, Itai ^a   Rolandi, Marco ^a,b   Backer, Scott A ^a   Scholl, Andreas ^b   Doran, Andrew ^b   Okawa, David ^a   Zettl, Alex ^a,b   Fréchet, Jean M J ^a,b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDENSATION; DECOMPOSITION; HYDROPHILICITY; OXIDATION; SOLVENTS; SURFACE TREATMENT;

HEXADECANES; HIGH FIELD SCANNING PROBE LITHOGRAPHY; HYDROPHILIC SURFACE; SOLVENT DECOMPOSITION;

LITHOGRAPHY;

EID: 36249026251     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200700716     Document Type: Article

References (34)

1. C. F. Quate, Surf. Sci. 1997, 386, 259.
2. J. Loos, Adv. Mater. 2005, 17, 1821.
3. R. Garcia, R. V. Martinez, J. Martinez, Chem. Soc. Rev. 2006, 35, 29.
4. P. Avouris, T. Hertel, R. Martel, Appl. Phys. Lett. 1997, 71, 285.
5. E. Snow. P. Campbell, Appl. Phys. Lett. 1994, 64, 1932.
6. J. A. Dagata, J. Schneir, H. H. Harary, C. J. Evans, M. T. Postek, J. Bennett, Appl. Phys. Lett. 1990, 56, 2001.
7. J. A. Dagata, T. Inoue, J. Itoh, K. Matsumoto, H. Yokoyama, J. Appl. Phys. 1998, 84, 6891.
8. E. Dubois, J. L. Bubendorff, J. Appl. Phys. 2000, 87, 8148.
9. R. Garcia, M. Calleja, F. Pérez-Murano, Appl. Phys. Lett. 1998, 72, 2295.
10. E. Stiévenard, P. A. Fontaine, E. Dubois, Appl. Phys. Lett. 1997, 70, 3272.
11. H. Sugimura, T. Uchida, N. Kitamura, H. Masuhara, J. Phys. Chem. 1994, 98, 4352.
12. M. Rolandi, C. F. Quate, H. Dai, Adv. Mater. 2002, 14, 191.
13. M. Rolandi, I. Suez, H. Dai, J. M. J. Fréchet, Nano Lett. 2004, 4, 889.
14. R. M. Penner, M. J. Heben, N. S. Lewis, C. F Quate, Appl. Phys. Lett. 1991, 58, 1389.
15. D. C. Tully, K. Wilder, J. M. J. Fréchet, A. Trimble, C. F. Quate, Adv. Mater. 1999, 11, 314.
16. K. Wilder, C. F. Quate, D. Adderton, R. Bernstein, V. Eilings, Appl. Phys. Lett. 1998, 73, 2527.
17. G. Y. Liu, Y. L. Qian, Acc. Chem. Res. 2000, 33, 457.
18. M. Lercel, G. Redinbo, H. G. Craighead, C. W. Sheen, D. L. Allara, Appl. Phys. Lett. 1994, 65, 974.
19. X. N. Xie, M. Deng, H. Xu, S. W. Yang, D. C. Qi, X. Y. Gao, H. J. Chung, C. H. Sow, V. B. C. Tan, A. T. S. Wee, J. Am. Chem. Soc. 2006, 128, 2738.
20. M. Cavallini, P. Mei, F. Biscarini, R. Garcia, Appl. Phys. Lett. 2003, 83, 5286.
21. S. Hoeppener, R. Maoz, J. Sagiv, Nano Lett. 2003, 5, 761.
22. N. Farkas, J. R. Comer, G. Zhang, E. A. Evans, R. D. Ramsier, S. Wight, J. A. Dagata, Appl. Phys. Lett. 2004, 85, 5691.
23. M. Tello, R. Garcia, Appl. Phys. Lett. 2003, 83, 2339.
24. I. Suez, S. A. Backer, J. M. J Fréchet, Nano Lett. 2005, 5, 321.
25. R. V. Martinez, R. Garcia, Nano Lett. 2005, 5, 1161.
26. M. Tello, R. Garcia, J. A. Martín-Gago, N. F. Martinez, M. S. Martín-González, L. Aballe, A. Baranov, L. Gregoratti, Adv. Mater. 2005, 17, 1480.
27. R. V. Martinez, N. S. Losilla, J. Martinez, Y. Huttel, R. Garcia, Nano Lett. 2007, published online, March 13; DOI 10.1021/nl070328r.
28. C. R. Kinser, M. J. Schmitz, M. C. Hersam, Nano Lett. 2005, 5, 91.
29. C. R. Kinser, M. J. Schmitz, M. C. Hersam, Adv. Mater. 2006, 18, 1377.
30. C. Black, C. G. Joris, H. S. Taylor, J. Chem. Phys. 1948, 16, 537.
31. L. F. Thompson, C. G. Willson, M. J. Bowden, Introduction to Microlithography, 2nd ed., ACS, Washington, DC 1994.
32. For this surface, prior to the wet etch, a low power oxidation in an RF plasma was implemented for 10 s. for removal of the surrounding organic monolayer. This plasma etch probably reduced the etch resistance of the patterns and cannot be responsible for the tone reversal effect.
33. M. Zharnikov, A. Shaporenko, A. Paul, A. Gölzhäuser, A. Scholl, J. Phys. Chem. B 2005, 109, 5168.
34. M. Zharnikov, W. Geyer, A. Gölzhäuser, S. Frey, M. Grunze, Phys. Chem. Chem. Phys. 1999, 1, 3163.