Parallel writing by local oxidation nanolithography with submicrometer resolution

Applied Physics Letters

Volumn 83, Issue 25, 2003, Pages 5286-5288

  Cavallini, Massimiliano ^a   Mei, Paolo ^a   Biscarini, Fabio ^a   García, Ricardo ^b  

^a CNR   (Italy)

^b INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC POTENTIAL; ELECTRODES; EVAPORATION; OXIDATION; SILICON WAFERS; SUBSTRATES; SURFACE TREATMENT; VIDEODISKS;

PARALLEL WRITING; POLYMERIC SUPPORT;

NANOTECHNOLOGY;

EID: 0942277724     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1633685     Document Type: Article

References (24)

1. R. Garcìa, M. Calleja, and H. Roher, J. Appl. Phys. 86, 1898 (1999).
2. E. B. Cooper, S. R. Manalis, H. Fang, H. Dai, K. Matsumoto, S. C. Minne, T. Hunt, and C. F. Quate, Appl. Phys. Lett. 75, 3566 (1999).
3. M. Tello, F. Garcìa, and R. Garcìa, J. Appl. Phys. 92, 4075 (2002).
4. F. S. Chien, C.-L. Wu, Y.-C. Chou, T. T. Chen, S. Gwo, and W.-F. Hsieh, Appl. Phys. Lett. 75, 2429 (1999).
5. T. Onuki, T. Tokizaki, Y. Watanabe, T. Tsuchiya, and T. Tani, Appl. Phys. Lett. 80, 4629 (2002).
6. K. Matsumoto, Y. Gotoh, T. Maeda, J. A. Dagata, and J. S. Harris, Appl. Phys. Lett. 76, 239 (2000).
7. V. Bouchiat, M. Faucher, C. Thirion, W. Wernsdorfer, T. Fournier, and B. Pannetier, Appl. Phys. Lett. 79, 123 (2001).
8. A. Dorn, M. Sigrist, A. Fuhrer, T. Ihn, T. Heinzel, K. Ensslin, W. Wegscheider, and M. Bichler, Appl. Phys. Lett. 80, 252 (2002).
9. T. Yoshinobu, J. Suzuki, H. Kurooka, W. C. Moon, and H. Iwasaki, Electrochim. Acta 48, 3131 (2003).
10. R. Maoz, E. Frydman, S. R. Cohen, and J. Sagiv, Adv. Mater. (Weinheim, Ger.) 12, 725 (2000).
11. F. Biscarini and R. Garcìa, Patent No. 200300565, Spanish Patent Office (2003).
12. F. S. Chien, Y.-C. Chou, T. T. Chen, W.-F. Hsieh, T. S. Chao, and S. Gwo, J. Appl. Phys. 89, 2465 (2001).
13. S. C. Minne, J. D. Adams, G. Yaralioglu, S. R. Manalis, A. Atalar, and C. F. Quate, Appl. Phys. Lett. 73, 1742 (1998).
14. H. Sugimura and N. Nakagiri, J. Appl. Phys. 34, 3406 (1995).
15. M. Calleja, M. Tello, and R. Garcìa, J. Appl. Phys. 92, 5539 (2002); S. Gómez-Moñivas, J. J. Sáenz, M. Calleja, and R. Garcìa, Phys. Rev. Lett. 91, 056101 (2003).
16. M. Calleja, M. Tello, and R. Garcìa, J. Appl. Phys. 92, 5539 (2002); S. Gómez-Moñivas, J. J. Sáenz, M. Calleja, and R. Garcìa, Phys. Rev. Lett. 91, 056101 (2003).
17. H. O. Jacobs and G. M. Whitesides, Science 291, 1763 (2001).
18. E. Schäffer, T. Thurn-Albrecht, T. P. Russel, and U. Steiner, Nature (London) 403, 874 (2000).
19. S. Chou, L. Zhuang, and L. Guo, Appl. Phys. Lett. 75, 1004 (1999).
20. M. Tello and R. Garcìa, Appl. Phys. Lett. 79, 424 (2001).
21. J. A. Dagata, F. Pérez-Murano, G. Abadal, K. Morimoto, T. Inoue, J. Itoh, and H. Yokoyama, Appl. Phys. Lett. 76, 2710 (2000).
22. T. Teuschler, K. Mahr, S. Miyazaki, M. Hundhausen, and L. Ley, Appl. Phys. Lett. 67, 3144 (1995).
23. M. Cavallini and F. Biscarini, Nano Lett. 3, 1269 (2003).
24. As we were completing this work, we have become aware of a work reporting the transfer of micrometric patterns on a rigid metallic object to a highly ordered organosilane monolayer on silicon upon the application of a voltage between the object and the silicon substrate; S. Hoeppener, R. Maoz, and J. Sagiv, Nano Lett. 3, 761 (2003).