Dependence of PMOS metal work functions on surface conditions of high-K gate dielectrics

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 43-46

  Jha, Rashmi ^a   Lee, Bongmook ^a   Chen, Bei ^a   Novak, Steven ^a   Majhi, Prashant ^b   Misra, Veena ^a  

^a North Carolina State University   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACIAL LAYERS; METAL GATE ELECTRODES; PMOS;

DIFFUSION BARRIERS; ELECTRODES; FUNCTION EVALUATION; GATE DIELECTRICS; HEAT TREATMENT;

MOS DEVICES;

EID: 33847717471     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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