Demonstration of a new approach towards 0.25V Low-Vt CMOS using Ni-based FUSI

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 98-99

  Yu, H Y ^a   Kittl, J A ^b   Lauwers, A ^a   Singanamalla, R ^a   Demeurisse, C ^a   Kubicek, S ^a   Augendre, E ^a   Veloso, A ^a   Brus, S ^a   Vrancken, C ^a   Hoffmann, T ^a   Mertens, S ^a   Onsia, B ^a   Verbeeck, R ^a   Demand, M ^a   Rothchild, A ^a   Froment, B ^a   Van Dal, M ^c   De Meyer, K ^a   Li, M F ^d   Chen, J D ^d   Jurczak, M ^a   Absil, P P ^a   Biesemans, S ^a   more..

^a IMEC   (Belgium)

^b TEXAS INSTRUMENTS   (Belgium)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

^d NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; LEAKAGE CURRENTS; MOSFET DEVICES; NICKEL COMPOUNDS; WORK FUNCTION;

CHANNEL MOBILITY; DIELECTRIC INTEGRITY;

CMOS INTEGRATED CIRCUITS;

EID: 41149113015     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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2. J. Kedzierski, et al. IEDM,p.315, (2003);
3. A. Veloso, et al. IEDM, p.855, (2004);
4. M. Terai, et al. Tech. VLSI, p.68, (2005);
5. A. Lauwers, et al. IEDM, p.661, (2005);
6. H.Y. Yu, et al. IEDM, p.645 (2005);
7. H.Y. Yu et al IEDM, p.653 (2005);
8. Y.H. Kim, et al. IEDM, p.657 (2005);
9. C.H. Wang, IEDM, p.161, (2004)