Effect of thickness on structural and electrical properties of GaN films grown on SiN-treated sapphire

Journal of Crystal Growth

Volumn 308, Issue 2, 2007, Pages 283-289

  Bchetnia, A ^a   Toure A ^a   Lafford, T A ^b   Benzarti, Z ^a   Halidou, I ^a   Habchi, M M ^a   El Jani, B ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^b Bede Scientific Instruments Ltd   (United Kingdom)

Author keywords

A1. HRXRD; A1. Mosaic; A1. Stress; B1. GaN

Indexed keywords

CARRIER CONCENTRATION; FILM THICKNESS; GALLIUM COMPOUNDS; HALL EFFECT; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SILICON NITRIDE; X RAY DIFFRACTION;

COALESCENCE PROCESS; HIGH-RESOLUTION X-RAY DIFFRACTION (HRXRD); LASER REFLECTOMETRY; PLANE STRAINS;

THIN FILMS;

EID: 35348850094     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.09.006     Document Type: Article

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