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Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 542-545

Direct, independent measurement of twist and tilt mosaic as a function of thickness in epitaxial GaN

(3) Lafford, T A a Parbrook, P J b Tanner, B K c

a Bede Scientific Instruments Ltd (United Kingdom)

b UNIVERSITY OF SHEFFIELD (United Kingdom)

c DURHAM UNIVERSITY (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

III-V SEMICONDUCTORS; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; ORGANOMETALLICS; SCREW DISLOCATIONS; WIDE BAND GAP SEMICONDUCTORS;

EPILAYER THICKNESS; GAN EPITAXIAL FILMS; GRAZING-INCIDENCE IN-PLANE X-RAY DIFFRACTIONS; HIGH RESOLUTION; INDEPENDENT MEASUREMENT; LAYER THICKNESS; METAL-ORGANIC VAPOUR PHASE EPITAXY;

GALLIUM NITRIDE;

EID: 84875109303 PISSN: 16101634 EISSN: None Source Type: Conference Proceeding
DOI: 10.1002/pssc.200390109 Document Type: Conference Paper

Times cited : (17)

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