In situ monitoring of the stress evolution in growing group-III-nitride layers

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages 209-216

  Krost, A ^a   Dadgar, A ^a   Schulze, F ^a   Blasing J ^a   Strassburger, G ^a   Clos, R ^a   Diez, A ^a   Veit, P ^a   Hempel, T ^a   Christen, J ^a  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

A1. In situ monitoring; A1. Stresses; A3. Metalorganic chemical vapour deposition; B1. Group III nitrides; B2. GaN

Indexed keywords

CRACK INITIATION; CRYSTAL LATTICES; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; STRAIN RATE; STRESSES; THERMAL EXPANSION;

GAN; GROUP-III NITRIDES; IN SITU MONITORING; LATTICE MISMATCH;

GALLIUM COMPOUNDS;

EID: 20144368797     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.10.090     Document Type: Conference Paper

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