Structural properties of GaN films grown on sapphire by molecular beam epitaxy

Applied Physics Letters

Volumn 68, Issue 8, 1996, Pages 1141-1143

  Zhu, Q ^a   Botchkarev, A ^b   Kim, W ^b   Aktas, O ^b   Salvador, A ^b   Sverdlov, B ^b   Morkoc H ^b   Tsen, S C Y ^c   Smith, David J ^c  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000465922     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115739     Document Type: Article

References (13)

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7. D. E. Cox, in Handbook on Synchrotron Radiation, edited by G. S. Brown and D. E. Moncton (Publisher, City, 1991), Vol. 3, p. 155.
8. The fit improves significantly by allowing two different peak-widths. The fitted shoulder peak turned out to be broader [FWHM=0.034(7)°] than the main peak [FWHM=0.0285(8)°].
9. L̄=0.94λ/FWHM(2θ)cosθ; see, for example, B. E. Warren, in X-ray Diffraction (Addison-Wesley, Reading, MA, 1969).
10. A super-Lorentzian function is a pseudo-Voigt function with a mixing parameter η> 1.0, η normally varies between 0.0 (pure Gaussian) and 1.0 (pure Lorentzian).
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12. Ö Aktas, W. Kim, Z. Fan, S. N. Mohammad, A. Botchkarev, A. Salvador, B. Sverdlov, and H. Morkoç, Electron. Lett. 31, 1389 (1995).
13. J. J. Song and H. Morkoç (unpublished).