Correlations between structural, electrical and optical properties of GaN layers grown by molecular beam epitaxy

Physica Status Solidi (B) Basic Research

Volumn 216, Issue 1, 1999, Pages 659-662

  Kirchner, V ^a   Fehrer, M ^a   Figge, S ^a   Heinke, H ^a   Einfeldt, S ^a   Hommel, D ^a   Selke, H ^a   Ryder, P L ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033243016     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199911)216:1<659::AID-PSSB659>3.0.CO;2-T     Document Type: Article

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