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Applied Physics Letters

Volumn 80, Issue 13, 2002, Pages 2293-2295

Influence of different types of threading dislocations on the carrier mobility and photoluminescence in epitaxial GaN

(5) Shi, J Y a Yu, L P a Wang, Y Z a Zhang, G Y a Zhang, H a

a PEKING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; GAN EPITAXIAL FILMS; GAN FILM; HIGH RESOLUTION X RAY DIFFRACTION; ROOM TEMPERATURE; THREADING DISLOCATION; THREADING DISLOCATION DENSITIES; YELLOW LUMINESCENCE;

EDGE DISLOCATIONS; EPITAXIAL FILMS; EPITAXIAL GROWTH; GALLIUM NITRIDE; PHOTOLUMINESCENCE; SCREW DISLOCATIONS; SEMICONDUCTOR QUANTUM WELLS; SINGLE CRYSTALS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

CARRIER MOBILITY;

EID: 79956020839 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1465531 Document Type: Article

Times cited : (79)

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