0.15 μ m gate-length AlGaN/GaN HEMTs with varying gate recess length

Solid-State Electronics

Volumn 47, Issue 1, 2003, Pages 117-122

  Kuliev, A ^a   Kumar, V ^a   Schwindt, R ^a   Selvanathan, D ^a   Dabiran, A M ^b   Chow, P ^b   Adesida, I ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b SVT ASSOCIATES   (United States)

Author keywords

AlGaN; GaN; Gate recess; High electron mobility transistors; Trap assisted tunneling

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRON MOBILITY; FABRICATION; GALLIUM NITRIDE; GATES (TRANSISTOR); LEAKAGE CURRENTS; MICROWAVES; OHMIC CONTACTS;

GATE-RECESS LENGTH;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037211141     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00258-7     Document Type: Article

References (14)

1. Sheppard S.T., Doverspike K., Pribble W.C., Allen S.T., Palmour J.W., Kehias L.T.et al. High power microwave GaN/AlGaN HEMTs on silicon carbide. IEEE Electron. Dev. Lett. 20(4):1999;161-163.
2. Nguyen N.X., Micovic M., Wong W.S., Hashimoto P., McCray L.M., Janke P.et al. High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE. Electron. Lett. 36(3):2000;468-469.
3. Zhang N.Q., Keller S., Parish G., Heikmann S., Denbarrs S.P., Mishra U.K. High breakdown GaN HEMT with overlapping gate structure. IEEE Electron. Dev. Lett. 21(9):2000;421-423.
4. Chen Q., Yang J.W., Khan M.A., Ping A.T., Adesida I. High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates. Electron. Lett. 33(7):1997;1413-1414.
5. Tilak V., Green B., Kaper V., Kim H., Prunty T., Smart J.et al. Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs. IEEE Electron. Dev. Lett. 22(11):2001;504-506.
6. T of 110 GHz. Electron. Lett. 36(2):2000;358-359.
7. 0.8N/GaN HJFETs: two-dimensional full band Monte Carlo simulation including polarization effect. IEEE Trans. Electron. Dev. 47(10):2000;1965-1972.
8. Miller E.J., Dang X.Z., Yu E.T. Gate leakage current mechanism in AlGaN/GaN heterostructure field-effect transistors. J. Appl. Phys. 88(10):2000;5951-5958.
9. Ansell B.J., Harrison I., Foxon C.T. The effect of surface passivation and illumination on the device properties of AlGaN/GaN HFETs. Phys. Stat. Sol. A. 188(1):2001;279-282.
10. Pearton S.J., Zolper J.C., Shul R.J., Ren R. GaN: processing, defects, and devices. J. Appl. Phys. 86(1):1999;30.
11. Kumar V., Lu W., Khan F.A., Schwindt R., Piner E., Adesida I. Recessed 0.25. μ m gate AlGaN/GaN HEMTs on SiC with high gate-drain breakdown voltage using ICP-RIE Electron. Lett. 37(24):2001;1483-1485.
12. Ping A.T., Schmitz A.C., Adesida I., Asif Khan M., Chen Q., Yang J. Characterization of reactive ion etching-induced damage to n-GaN surface using Schottky diodes. J. Electron. Mater. 26(3):1997;266-271.
13. Lee K., Shur M., Lee K.W., Vu T., Roberts P., Helix M. A new interpretation of end resistance measurements. IEEE Electron. Dev. Lett. 5(1):1984;5-7.
14. Sze S.M. Physics of semiconductor devices. 2nd ed. 1981;403 Wiley, New York.