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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 2360-2363

Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short-gate HEMTs

(7) Shiojima, K a Makimura, T a Maruyama, T b Suemitsu, T a Shigekawa, N a Hiroki, M a Yokoyama, H a

a NTT CORPORATION (Japan)

b NTT Advance Technology Corporation (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTANCE; ELECTRON VELOCITY; GATE-LENGTH DEPENDENCES; SAPPHIRE SUBSTRATES; 68.55.JK; 81.05.EA; 85.30.DE; 85.30.TV; DC AND RF CHARACTERISTICS; EFFECTIVE ELECTRONS; SOURCE RESISTANCE;

ELECTRON MOBILITY; EPITAXIAL GROWTH; GALLIUM NITRIDE; MORPHOLOGY; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSCONDUCTANCE; CONTACT RESISTANCE; SAPPHIRE; SILICON CARBIDE;

CRYSTAL STRUCTURE; HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33746349533 PISSN: 18626351 EISSN: None Source Type: Journal
DOI: 10.1002/pssc.200565130 Document Type: Conference Paper

Times cited : (5)

References (8)

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