Intrinsic transit delay and effective electron velocity of AlGaN/GaN high electron mobility transistors

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 1-7, 2005, Pages

  Suemitsu, Tetsuya ^a   Shiojima, Kenji ^a   Makimura, Takashi ^a   Shigekawa, Naoteru ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Delay time; Field effect transistor; GaN; High electron mobility transistor; High frequency

Indexed keywords

CAPACITANCE; CONCENTRATION (PROCESS); ELECTRON BEAM LITHOGRAPHY; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; PASSIVATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; TRANSCONDUCTANCE;

DELAY TIME ANALYSIS; ELECTRON VELOCITY; HIGH FREQUENCY; OHMIC METALLIZATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 17444425384     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.L211     Document Type: Article

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