Large-signal performance of deep submicrometer AlGaN/AlN/GaN HEMTs with a field-modulating plate

IEEE Transactions on Electron Devices

Volumn 52, Issue 8, 2005, Pages 1689-1692

  Sun, Yunju ^a   Eastman, Lester F ^a  

^a Cornell University   (United States)

Author keywords

Field plate; GaN; GaN AlN AlGaN; Heterojunction field effect transistor (HFET); High electron mobility transistor (HEMT); Microwave power

Indexed keywords

ALUMINUM NITRIDE; GALLIUM NITRIDE; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; SILICON NITRIDE;

FIELD PLATE; HETEROJUNCTION FIELD EFFECT TRANSISTOR (HFET); MICROWAVE POWER;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 23344433914     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.851844     Document Type: Article

References (9)

1. Y. Ando, Y. Okamoto, H. Miyamoto, T. Nakayama, T. Inoue, and M. Kuzuhara, "10-W/mm AlGaN-GaN HFET with a field modulating plate," IEEE Electron Device Lett., vol. 24, no. 5, pp. 289-291, May 2003.
2. R. Thompson, T. Prunty, V. Kaper, and J. R. Shealy, "Performance of the AlGaN HEMT structure with a gate extension," IEEE Trans. Electron Devices, vol. 51, no. 2, pp. 292-295, Feb. 2004.
3. L. Shen, S. Heikman, B. Moran, R. Coffee, N.-Q. Zhang, D. Buttari, I. P. Smorchkova, S. Keller, S. P. Denbaars, and U. K. Mishra, "AlGaN/GaN high power microwave HEMTs," IEEE Electron Device Lett., vol. 22, no. 10, pp. 457-459, Oct. 2001.
4. M. C. Tarplee, V. P. Madangarli, Q. Zhang, and T. S. Sudarshan, "Design rules of field plate edge termination in SiC schottky diodes," IEEE Trans. Electron Devices, vol. 48, no. 12, pp. 2659-2663, Dec. 2001.
5. S. Karmalkar and U. K. Mishra, "Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate," IEEE Trans. Electron Devices, vol. 48, no. 8, pp. 1515-1521, Aug. 2001.
6. R. Larue, C. Yuen, and G. Zdasiuk, "Distributed GaAs FET circuit model for broad-band and millimeter wave applications," in IEEE MTT-S Dig., 1984, pp. 164-166.
7. J. Frenkel, "On the theory of electric breakdown of dielectrics and electronic semiconductors," Tech. Phys., vol. 5, no. 9, pp. 685-695, 1938.
8. J. G. Simmons, "Generalized formula for the electric tunnel effect between similar electrodes separated by a thin insulating film," J. Appl. Phys., vol. 34, pp. 1793-1803, 1963.
9. A. Rose, "Space-charge-limited currents in solids," Phys. Rev., vol. 97, no. 6, pp. 1538-1544, Mar. 1955.