30-GHz-band over 5-W power performance of short-channel AlGaN/GaN heterojunction FETs

IEEE Transactions on Microwave Theory and Techniques

Volumn 53, Issue 1, 2005, Pages 74-79

  Inoue, Takashi ^a   Ando, Yuji ^a   Miyamoto, Hironobu ^a   Nakayama, Tatsuo ^a   Okamoto, Yasuhiro ^a   Hataya, Kohji ^b   Kuzuhara, Masaaki ^c  

^a C/o Syst Devices Res Laboratories   (Japan)

^b FURUKAWA ELECTRIC CO LTD   (Japan)

^c UNIVERSITY OF FUKUI   (Japan)

Author keywords

AlGaN GaN; Delay time analysis; Heterojunction FET; K a band; Short channel; SiC substrate; T shaped gate

Indexed keywords

FREQUENCIES; GALLIUM NITRIDE; HETEROJUNCTIONS; LITHOGRAPHY; OSCILLATIONS; POLARIZATION; SILICON COMPOUNDS; THERMAL EFFECTS;

ALGAN/GAN; DELAY-TIME ANALYSIS; HETEROJUNCTION FIELD EFFECT TRANSISTORS (FET); K A-BAND; SHORT CHANNEL; SIC SUBSTRATE; T-SHAPED GATE;

FIELD EFFECT TRANSISTORS;

EID: 12344276983     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2004.839333     Document Type: Conference Paper

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