Short-channel effects in AlGAN/GaN HEMTs

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 82, Issue 1-3, 2001, Pages 238-240

  Breitschadel O ^a   Kley, L ^a   Grabeldinger H ^a   Hsieh, J T ^a   Kuhn, B ^a   Scholz, F ^a   Schweizer, H ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

AlGaN GaN heterostructures; HEMTs; Short channel effects

Indexed keywords

GALLIUM NITRIDE; GATES (TRANSISTOR); HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

SHORT-CHANNEL EFFECTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035933091     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00747-9     Document Type: Article

References (6)