Excellent thermal stability of Al2O3/ZrO 2/Al2O3 stack structure for metal-oxide-semiconductor gate dielectrics application

Applied Physics Letters

Volumn 80, Issue 18, 2002, Pages 3385-3387

  Chang, Hyo Sik ^a   Jeon, Sanghun ^a   Hwang, Hyunsang ^a   Moon, Dae Won ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER CHEMICAL VAPOR DEPOSITION; FURNACE ANNEALING; GATE STACKS; MEDIUM ENERGY ION SCATTERING; METAL OXIDE SEMICONDUCTOR; NANOLAMINATE; OXYGEN AMBIENT; PLASMA NITRIDATION; SILICATE LAYERS; STACK STRUCTURE; ULTRAHIGH VACUUM CONDITIONS;

ATOMIC SPECTROSCOPY; CHEMICAL STABILITY; CHEMICAL VAPOR DEPOSITION; GATE DIELECTRICS; SILICATES; THERMODYNAMIC STABILITY; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIUM; ZIRCONIUM ALLOYS;

ALUMINUM;

EID: 79955985174     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1477266     Document Type: Article

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