메뉴 건너뛰기




Volumn 48, Issue 2, 2005, Pages 45-48

Crucial applications addressed via: Fundamental ALD advances

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION (ALD); GAP DIELECTRICS; TIME-PHASED MULTILEVEL FLOW (TMF); TRIMETHYLALUMINUM (TMA);

EID: 14944374488     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Review
Times cited : (6)

References (24)
  • 4
    • 0000300191 scopus 로고
    • Atomic layer epitaxy
    • ed. Huerle, Elsevier
    • T. Suntola, "Atomic Layer Epitaxy," in Handbook of Crystal Growth 3, ed. Huerle, Elsevier, p. 601, 1994.
    • (1994) Handbook of Crystal Growth , vol.3 , pp. 601
    • Suntola, T.1
  • 6
    • 14944349494 scopus 로고    scopus 로고
    • A high deposition rate process using limited optimized reaction ALD
    • Aug. 16-18
    • G.Y. Kim, et al., "A High Deposition Rate Process Using Limited Optimized Reaction ALD," ALD 2004, Aug. 16-18, 2004.
    • (2004) ALD 2004
    • Kim, G.Y.1
  • 8
  • 12
    • 0036147929 scopus 로고    scopus 로고
    • Jan.
    • O. Sneh, et al., Thin Solid Films, Vol. 402/1-2, pp. 248-261, Jan. 2002.
    • (2002) Thin Solid Films , vol.402 , Issue.1-2 , pp. 248-261
    • Sneh, O.1
  • 13
    • 14944347537 scopus 로고    scopus 로고
    • High productivity ALD using synchronously modulated flow draw
    • Aug. 16-18
    • O. Sneh, "High Productivity ALD Using Synchronously Modulated Flow Draw," ALD 2004, Aug. 16-18, 2004.
    • (2004) ALD 2004
    • Sneh, O.1
  • 20
    • 14944372945 scopus 로고    scopus 로고
    • High-k gate deposition: ALD or CVD?
    • May
    • L. Colombo, "High-k Gate Deposition: ALD or CVD?" Solid State Technology, p. 112, May 2004.
    • (2004) Solid State Technology , pp. 112
    • Colombo, L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.