Analysis of uniaxial and biaxial strain impact on the linearity of fully depleted SOI nMOSFETs

Solid-State Electronics

Volumn 51, Issue 9, 2007, Pages 1194-1200

  Pavanello, Marcelo Antonio ^a,b   Martino, João Antonio ^a,b   Simoen, Eddy ^c   Claeys, Cor ^c,d  

^a CENTRO UNIVERSITÁRIO DA FEI   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

^c IMEC   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

HARMONIC DISTORTION; SATURATION (MATERIALS COMPOSITION); SILICON ON INSULATOR TECHNOLOGY; STRAIN; TRANSISTORS; TRIODES;

BIAXIAL STRAIN; GATE VOLTAGE; SHORT-CHANNEL DEVICES;

MOSFET DEVICES;

EID: 34548561809     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.07.016     Document Type: Article

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