In-depth study of strained SGOI nMOSFETs down to 30nm gate length

Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference

Volumn 2005, Issue , 2005, Pages 297-300

  Andrieu, F ^a,b   Ernst, T ^a   Faynot, O ^a   Rozeau, O ^a   Bogumilowicz, Y ^a,c   Hartmann, J M ^a   Brevard L ^a   Toffoli, A ^a   Lafond, D ^a   Dansas, H ^a   Ghyselen, B ^d   Fournel, F ^a   Ghibaudo, G ^b   Deleonibus, S ^a  

^a CEA LETI   (France)

^b IMEP LAHC   (France)

^c STMICROELECTRONICS   (France)

^d PARC TECHNOLOGIQUE DES FONTAINES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON MOBILITY; OSCILLATIONS; SOLID STATE DEVICES; TRANSISTORS;

FLOATING BODY EFFECTS; FLOATING BODY TRANSISTORS; SHORT CHANNELS;

MOSFET DEVICES;

EID: 33751395916     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2005.1546644     Document Type: Conference Paper

References (17)

1. J. L. Hoyt et al., in IEDM Tech. Dig., pp.23-26, 2002.
2. K. Rim et al., in Symp. on VLSI Tech. Dig., pp. 59-60, 2001.
3. J. R. Hwang et al., in Symp. on VLSI Tech. Dig., pp. 103-4, 2003.
4. F. Bœuf et al., in proc. of SSDM, pp. 16-17, Tokyo, 2004.
5. H.Stohr, Z. W. Klemm, Z. Anorg. Allgem. Chem. 241, pp. 305, 1954.
6. B. Ghyselen et al., Solid State Elec. 48, pp. 1285-96, 2004.
7. A. V. Y. Thean et al., to be pub. in VLSI Symp.Tech. Dig., 2005.
8. K. Rim et al., in IEDM Tech. Dig., pp. 49-52, 2003.
9. J.-S. Goo et al., IEEE Electron Dev. Lett. 24, 5, pp. 351-3, 2003.
10. T. Sanuki et al., in IEDM Tech. Dig, pp. 65-68, 2003.
11. K. Romanjek et al.. Solid-State Electronics, vol.49, n°5, pp. 721-6, 2005
12. F. Andrieu et al., to be pub. in Symp. on VLSI Tech. Dig., 2005.
13. M. Sadaka et al., in proc. of IEEE Int. SOI Conf., pp. 209-211, 2004.
14. S. Takagi et al., in proc. of IEDM Tech. Dig., pp. 57-60, 2003.
15. J. Cai et al., in proc. of IEDM Tech. Dig., pp. 165-168, 2004.
16. K. Romanjek et al., IEEE Electron. Device Letter 25, 8, pp.583-6, 2004.
17. J. Pretet et al., in proc. of ESSDERC, pp. 515-8, 2002.