Non-linear performance comparison for FD and PD SOI MOSFETs based on the integral function method and Volterra modelling

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Volumn 18, Issue 4, 2005, Pages 283-296

  Parvais, Bertrand ^a,d   Cerdeira, Antonio ^b   Schreurs, Dominique ^c   Raskin, Jean Pierre ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^b DEPARTAMENTO DE FÍSICA   (Mexico)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d IMEC   (Belgium)

Author keywords

Distortion; FD; Fully depleted; IFM; Integral function method; Intermodulation; Linearity; Partially depleted; PD; Silicon oninsulator; SOI; Volterra

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC POTENTIAL; INTERMODULATION; MATHEMATICAL MODELS; POWER AMPLIFIERS; SILICON ON INSULATOR TECHNOLOGY; WIRELESS TELECOMMUNICATION SYSTEMS;

FULLY-DEPLETED (FD); INTEGRAL FUNCTION METHODS (IFM); PARTIALLY-DEPLETED (PD); VOLTERRA;

MOSFET DEVICES;

EID: 22144449577     PISSN: 08943370     EISSN: None     Source Type: Journal    
DOI: 10.1002/jnm.578     Document Type: Article

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