Effect of gate-field dependent mobility degradation on distortion analysis in MOSFET's

IEEE Transactions on Electron Devices

Volumn 44, Issue 11, 1997, Pages 2044-2052

  Van Langevelde, Ronald ^a,b   Klaassen, François M ^a,b  

^a IEEE   (Netherlands)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC DISTORTION; ELECTRIC NETWORK ANALYSIS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MODELS;

GATE FIELD DEPENDENT MOBILITY DEGRADATION; GATE VOLTAGE DEPENDENT SERIES CAPACITANCE;

MOSFET DEVICES;

EID: 0031270536     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.641382     Document Type: Article

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