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Volumn 47, Issue 10, 2003, Pages 1657-1661

New approach for the gate current source-drain partition modeling in advanced MOSFETs

Author keywords

Gate current; Modeling; MOSFET; Source drain partition

Indexed keywords

CHARGE TRANSFER; COMPUTER SIMULATION; ELECTRIC CURRENTS; GATES (TRANSISTOR);

EID: 0042594432     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00180-1     Document Type: Conference Paper
Times cited : (15)

References (6)
  • 1
    • 0034449490 scopus 로고    scopus 로고
    • A new analytical delay and noise model for on-chip RLC interconnect
    • Cao Y., Huang X., Sylvester D., Chang N., Hu C. A new analytical delay and noise model for on-chip RLC interconnect. IEDM Tech. Digest. 2000;823-826.
    • (2000) IEDM Tech. Digest , pp. 823-826
    • Cao, Y.1    Huang, X.2    Sylvester, D.3    Chang, N.4    Hu, C.5
  • 3
    • 0035714812 scopus 로고    scopus 로고
    • A general partition scheme of gate leakage current suitable for MOSFET compact models
    • Shih W.L., Rios R., Packam P., Mistry K., Abbout T. A general partition scheme of gate leakage current suitable for MOSFET compact models. IEDM Tech. Digest. 4:2001;13.3.1.4.
    • (2001) IEDM Tech. Digest , vol.4 , pp. 13314
    • Shih, W.L.1    Rios, R.2    Packam, P.3    Mistry, K.4    Abbout, T.5
  • 4
    • 0024029982 scopus 로고
    • Analytical modeling of transfer admittance in small MOSFETs and application to interface state characterisation
    • Haddara H., Ghibaudo G. Analytical modeling of transfer admittance in small MOSFETs and application to interface state characterisation. Sol. State Electron. 31:1988;1077.
    • (1988) Sol. State Electron , vol.31 , pp. 1077
    • Haddara, H.1    Ghibaudo, G.2
  • 5
    • 0035498575 scopus 로고    scopus 로고
    • Impact of gate tunneling leakage on the operation of NMOS transistors with ultra-thin gate oxides
    • Lime F.et al. Impact of gate tunneling leakage on the operation of NMOS transistors with ultra-thin gate oxides. Microelec. Eng. 59:2001;119.
    • (2001) Microelec. Eng. , vol.59 , pp. 119
    • Lime, F.1
  • 6
    • 0036470297 scopus 로고    scopus 로고
    • Theory of direct tunneling current in metal-oxide-semiconductor structures
    • Clerc R., Spinelli A., Ghibaudo G., Pananakakis G. Theory of direct tunneling current in metal-oxide-semiconductor structures. J. Appl. Phys. 91:2002;1400.
    • (2002) J. Appl. Phys. , vol.91 , pp. 1400
    • Clerc, R.1    Spinelli, A.2    Ghibaudo, G.3    Pananakakis, G.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.