|
Volumn 47, Issue 10, 2003, Pages 1657-1661
|
New approach for the gate current source-drain partition modeling in advanced MOSFETs
|
Author keywords
Gate current; Modeling; MOSFET; Source drain partition
|
Indexed keywords
CHARGE TRANSFER;
COMPUTER SIMULATION;
ELECTRIC CURRENTS;
GATES (TRANSISTOR);
DRAIN CURRENT;
MOSFET DEVICES;
|
EID: 0042594432
PISSN: 00381101
EISSN: None
Source Type: Journal
DOI: 10.1016/S0038-1101(03)00180-1 Document Type: Conference Paper |
Times cited : (15)
|
References (6)
|