Self-consistent electrothermal modeling of class A, AB, and B power GaN HEMTs under modulated RF excitation

IEEE Transactions on Microwave Theory and Techniques

Volumn 55, Issue 9, 2007, Pages 1824-1831

  Camarchia, Vittorio ^a,b   Cappelluti, Federica ^a,b   Pirola, Marco ^a,b   Guerrieri, Simona Donati ^a,b   Ghione, Giovanni ^a,b  

^a IEEE

^b POLITECNICO DI TORINO   (Italy)

Author keywords

Electrothermal effects; GaN; Power RF field effect transistors (FETs); Semiconductor device; Thermal factors

Indexed keywords

CIRCUIT SIMULATION; SEMICONDUCTOR DEVICES; THERMODYNAMIC PROPERTIES;

ELECTRICAL COMPACT MODEL; ELECTROTHERMAL MODELING; FINITE-ELEMENT-METHOD; HEAT EQUATION; RF EXCITATION; WIENER-LIKE APPROACH;

MICROWAVE DEVICES;

EID: 34548525057     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2007.903839     Document Type: Article

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