Thermal transients in microwave active devices and their influence on intermodulation distortion

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2001, Pages 431-434

  David, Stéphane ^a   Batty, William ^a   Panks, Andrew J ^a   Johnson, Robert G ^a   Snowden, Christopher M ^a  

^a UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE NETWORKS; BOUNDARY CONDITIONS; GREEN'S FUNCTION; HIGH ELECTRON MOBILITY TRANSISTORS; INTERMODULATION; MATRIX ALGEBRA; SEMICONDUCTOR DEVICE MODELS; SIGNAL DISTORTION; THERMAL EFFECTS;

HEAT DIFFUSION EQUATION; INTERMODULATION DISTORTION; MICROWAVE ACTIVE DEVICES; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; THERMAL IMPEDANCE MATRIX; TRANSIENT THERMAL MODEL;

MICROWAVE DEVICES;

EID: 0035689765     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. Low-frequency dispersion and its influence on the inter-modulation performance of AlGaAs/GaAs HBT's
2. Quasi-two-dimensional MESFET simulations for CAD
3. A large-signal physical HEMT model
4. Thermal resistance of heat sinks with temperature dependent conductivity
5. Thermal properties of very fast transistors
6. Electro-thermal modelling and measurement for spatial power combining at millimeter wavelengths
7. Fully physical coupled electro-thermal modelling of transient and steady-state behaviour in microwave semiconductor devices
8. Electro-thermal modelling of microwave transistors and MMICs for optimised transient and steady-state performance