Ill conditioning in self-heating FET models

IEEE Microwave and Wireless Components Letters

Volumn 12, Issue 3, 2002, Pages 88-89

  Maas, S A ^a,b  

^a IEEE   (United States)

^b Applied Wave Research Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SELF HEATING EFFECTS;

COMPUTER SIMULATION; CONVERGENCE OF NUMERICAL METHODS; HEAT RESISTANCE; MATHEMATICAL MODELS; SIMULATORS; THERMAL CONDUCTIVITY; THERMAL EFFECTS; THRESHOLD VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 0036493353     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/7260.989860     Document Type: Article

References (11)

1. AlGaN/GaN heterostructure field-effect transistor model including thermal effects
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3. Self-heating and kink effects in a a-Si:H thin film transistors
4. The use of base ballasting to prevent the collapse of current gain in AlGaAs/GaAs heterojunction bipolar transistors
5. Emitter ballasting design for, and current handling capabilities of AlGaAs/GaAs power heterojunction bipolar transistors
6. A nonlinear model of the power MESFET including temperature and breakdown effects
7. Analysis of electrothermal transients and digital signal processing in electrically and thermally nonlinear microwave circuits
8. Large-signal microwave characterization of AlGaAs/GaAs HBT's based on a physics-based electrothermal model
9. Large signal modeling of HBT's including self-heating and transit-time effects
10. A new dynamic electro-thermal nonlinear model for silicon RF LDMOS FET's