Accurate large-signal modeling of AlGaN-GaN HEMT including trapping and self-heating induced dispersion

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn 2006, Issue , 2006, Pages

  Jarndal, Anwar ^a   Bunz, Bernd ^a   Kompa, Günter ^a  

^a UNIVERSITY OF KASSEL   (Germany)

Author keywords

GaN HEMT; High power device; Large signal model

Indexed keywords

COMPUTER SIMULATION; GALLIUM NITRIDE; GATES (TRANSISTOR); HEATING; MATHEMATICAL MODELS; SEMICONDUCTING ALUMINUM COMPOUNDS; SIGNAL PROCESSING;

GAIN COMPRESSION POINT; HIGH POWER DEVICES; LARGE-SIGNAL MODELS; SELF HEATING; SELF-HEATING EFFECTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34247485017     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. A. Jarndal and G. Kompa, "A New Small-Signal Modeling Approach Applied to GaN Devices," IEEE Trans. Microwave Theory Tech., vol. 53, no. 11, pp. 3440-3448, Nov. 2005.
2. D. E. Root, S. Fan, and J. Meyer, "Technology-independent large-signal FET models: a measurement-based approach to active device modeling," Proceedings of 15th ARMMS conf., Sep. 1991.
3. O. Kompa, "Modelling of dispersive microwave FET devices using a quasi-static approach" Int. Journal of Microwave and Millimeter-Wave Computer Aided Eng., vol. 5, no. 3, pp. 173-194, 1995.
4. F. Filicori, O. Vannini, A. Santarelli, A. M. Sanchez, A. Tazon, and Y. Newport, "Empirical Modeling of Low-Frequency Dispersive Effects Due to Traps and Thermal Phenomena in III-V FET's," IEEE Trans. Microwave Theory & Tech., vol. 43, pp. 2972-2981, Dec. 1995.
5. C. Charbonniaud, S. De Meyer, R. Quere, and JP. Teyssier, "Electrothermal and trapping effects characterization of AlGaN/GaN HEMTs," 11th GaAs Symposium, Munich, Oct. 2003, pp. 201-204.
6. O. Meneghesso, O. Verzellesi, R. Pierobon, F. Rampazzo, A. Chini, U. K. Mishra, C. Canali, and E. Zanoni, "Surface-Related Drain Current Dispersion Effects in AlGaN-GaN HEMTs," IEEE Trans. Microwave Theory & Tech., vol. 51, pp. 1554-1561, Oct. 2004.