From 3D thermal simulation of HBT devices to their thermal model integration into circuit simulators via Ritz vectors reduction technique

InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITHERM

Volumn 2002-January, Issue , 2002, Pages 22-28

  Sommet, R ^a   Lopez, D ^a   Quere R ^a  

^a UNIVERSITY OF LIMOGES   (France)

Author keywords

Circuit simulation; Electric variables measurement; Electrothermal effects; Finite element methods; Heterojunction bipolar transistors; Performance analysis; Predictive models; Semiconductor devices; SPICE; Temperature measurement

Indexed keywords

BIPOLAR SEMICONDUCTOR DEVICES; CIRCUIT SIMULATION; DESIGN; ELECTRIC HEATING; ELECTRIC VARIABLES MEASUREMENT; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SIMULATORS; SPICE; TEMPERATURE MEASUREMENT; THERMOGRAPHY (TEMPERATURE MEASUREMENT); TRANSISTORS;

3D THERMAL SIMULATION; ELECTRO-THERMAL EFFECTS; HETEROJUNCTION BIPOLAR TRANSISTOR (HBTS); PERFORMANCE ANALYSIS; PREDICTIVE MODELS; REDUCED THERMAL MODEL; THREE DIMENSIONAL FINITE ELEMENTS; TRANSIENT TEMPERATURE RESPONSE;

FINITE ELEMENT METHOD;

EID: 84950118940     PISSN: 19363958     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ITHERM.2002.1012434     Document Type: Conference Paper

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