Evaluation of GaN HEMT technology development through nonlinear characterization

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn 2006, Issue , 2006, Pages

  Angelini, A ^a   Camarchia, V ^a   Cappelluti, F ^a   Guerrieri, S Donati ^a   Pirola, M ^a   Bonani, F ^a   Serino, A ^b   Ghione, G ^a  

^a POLITECNICO DI TORINO   (Italy)

^b UNIVERSITY OF ROME TOR VERGATA   (Italy)

Author keywords

Electro thermal effects; GaN; Power RF FETs; Semiconductor device thermal factors

Indexed keywords

DC POWER TRANSMISSION; FLIP CHIP DEVICES; GALLIUM NITRIDE; HEAT SINKS; NONLINEAR SYSTEMS; SILICON CARBIDE;

ELECTRO THERMAL EFFECTS; NONLINEAR CHARACTERIZATION; S-PARAMETER MEASUREMENTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34247534695     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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