Coupled electrothermal, electromagnetic, and physical modeling of microwave power FETs

IEEE Transactions on Plasma Science

Volumn 36, Issue 5, 2008, Pages 2465-2470

  Denis, David ^a   Snowden, Christopher M ^b   Hunter, Ian C ^a  

^a UNIVERSITY OF LEEDS   (United Kingdom)

^b UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Electrothermal; Physical modeling; Power fieldeffect transistor (FET); Pseudomorphic high electron mobility transistor (pHEMT)

Indexed keywords

ELECTRIC HEATING; ELECTRON MOBILITY; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE CIRCUITS; MICROWAVE GENERATION; MICROWAVES; POWER FIELD EFFECT TRANSISTORS; RECONFIGURABLE HARDWARE; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSISTORS;

ELECTROTHERMAL; MICROWAVE BEHAVIOR; MICROWAVE POWER; MICROWAVE POWER FETS; OPERATING CONDITION; PHYSICAL MODEL; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; THERMAL BEHAVIORS;

FIELD EFFECT TRANSISTORS;

EID: 84994577536     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2006.875797     Document Type: Article

References (30)

1. C. M. Snowden and R. R. Pantoja, "Quasi-two-dimensional MESFET simulations for CAD," IEEE Trans. Electron Devices, vol. 36, no. 9, pp. 1564-1574, Sep. 1989.
2. F. Filicori, G. Ghione, and C. U. Naldi, "Physics-based electron device modeling and computer-aided MMIC design," IEEE Trans. Microw. Theory Tech., vol. 40, no. 7, pp. 1333-1352, Jul. 1992.
3. F. M. Rotella, G. Ma, Z. Yu, and R. W. Dutton, "Modeling, analysis, and design of RF LDMOS devices using harmonic-balance device simulation," IEEE Trans. Microw. Theory Tech., vol. 48, no. 6, pp. 991-999, Jun. 2000.
4. W. Heinrich and H. L Hartnagel, "Wave propagation on MESFET electrodes and its influence on transistor gain," IEEE Trans. Microw. Theory Tech., vol. MTT-35, no. 1, pp. 1-6, Jan. 1987.
5. R. H. Jansen and P. Pogatzki, "Non-linear distributed modeling of multifinger FETs/HEMTs in terms of layout geometry and process data," in 21st Eur. Microw. Conf., Stuttgart, Germany, 1991, pp. 609-614.
6. E. Larique, S. Mons, D. Baillargeat, S. Verdeyme, M. Aubourg, R. Quéré, P. Guillon, C. Zanchi, and J. Sombrin, "Linear and nonlinear FET modeling applying an electromagnetic and electrical hybrid software," IEEE Trans. Microw. Theory Tech., vol. 47, no. 6, pp. 915-918, Jun. 1999.
7. M. Farina, L. Pierantoni, and T. Rozzi, "Electromagnetic 3-D model for active linear devices: Application to pHEMTs in the linear regime," IEEE Trans. Microw. Theory Tech., vol. 52, no. 2, pp. 469-474, Feb. 2004.
8. J. V. Dilorenzo and W. R. Wisseman, "GaAs power MESFET's: Design, fabrication and performance," IEEE Trans. Microw. Theory Tech., vol. MTT-27, no. 5, pp. 367-378, May 1979.
9. E. W. Bryerton, M. D.Weiss, and Z. Popović, "Efficiency of chip-level versus external power combining," IEEE Trans. Microw. Theory Tech., vol. 47, no. 8, pp. 1482-1485, Aug. 1999.
10. C. Ito, T. Fujioka, I. Yoshida, and R. W. Dutton, "Performance improvement in larger RF LDMOSFET power amplifiers," in Proc. Asia-Pacific Microw. Conf., 2002, pp. 172-174.
11. M. Akkul, M. Sarfraz, J. Mayock, and W. Bosch, "50 watt MMIC power amplifier design for 2 GHz applications," in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2004, pp. 1355-1358.
12. G.-B. Gao, M.-Z. Whang, X. Gui, and H. Morko, "Thermal design studies of high-power heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 36, no. 5, pp. 854-863, May 1989.
13. G. Ghione and C. U. Naldi, "High-resolution self-consistent thermal modeling of multi-gate power GaAs MESFETs," in Int. Electron Devices Meeting Tech. Dig., Dec. 1989, pp. 147-150.
14. C. M. Snowden, "Large signal characterization of AlGaAs/GaAs HBT's based on a physics-based electrothermal model," IEEE Trans. Microw. Theory Tech., vol. 45, no. 1, pp. 58-71, Jan. 1997.
15. W. Batty, C. E. Christoffersen, A. J. Panks, S. David, C. M. Snowden, and M. B. Steer, "Electro-thermal CAD of power devices and circuits with fully physical time-dependent compact thermal modelling of complex non linear 3-D systems," IEEE Trans. Compon. Packag. Technol., vol. 24, no. 4, pp. 566-590, Sep. 2001.
16. A. Cidronali, G. Collodi, C. Accillaro, C. Toccafondi, G. Vannini, A. Santarelli, and G. Manes, "A scalable pHEMT model taking into account electromagnetic and electro-thermal effects," in Proc. 11th GaAs Symp., 2003, pp. 251-254.
17. M. Guyonnet, R. Sommet, R. Quéré, and G. Bouisse, "Non-linear electro-thermal model of LDMOS power transistor coupled to 3D thermal model in a circuit simulator," in Proc. 34th Eur. Microw. Conf., 2004, vol. 2, pp. 573-576.
18. D. Denis, C. M. Snowden, and I. C. Hunter, "Design of power FETs based on coupled electro- thermal-electromagnetic modeling," in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2005, pp. 461-464.
19. W. Heinrich, "Limits of FET modeling by lumped elements," Electro. Lett., vol. 22, no. 12, pp. 630-632, Jun. 1986.
20. B. Mallet-Guy, Z. Ouarch, M. Prigent, R. Quéré, and J. Obregon, "A distributed, measurement based, nonlinear model of FETs for high frequencies applications," in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 1997, pp. 869-872.
21. M. A. Alsunaidi, S. M. Sohel Imtiaz, and S. El-Ghazali, "Electromagnetic wave effects on microwave transistors using a full wave time domain model," IEEE Trans. Microw. Theory Tech., vol. 44, no. 6, pp. 799-808, Jun. 1996.
22. R. O. Grondin, S. El-Ghazaly, and S. Goodnick, "A review of global modeling of charge transport in semiconductors and full-wave electromagnetic," IEEE Trans. Microw. Theory Tech., vol. 47, no. 6, pp. 817-829, Jun. 1999.
23. R. Drury and C. M. Snowden, "A quasi-two-dimensionalHEMTmodel for microwave CAD applications," IEEE Trans. Electron Devices, vol. 42, no. 6, pp. 1026-1032, Jun. 1995.
24. C. M. Snowden and R. R. Pantoja, "GaAs MESFET physical models for process oriented design," IEEE Trans. Microw. Theory Tech., vol. 40, no. 7, pp. 1401-1409, Jul. 1992.
25. C. G. Morton, J. S. Atherton, C. M. Snowden, R. D. Pollard, and M. J. Howes, "A large signal physical HEMT model," in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 1996, pp. 1759-1762.
26. R. Singh and C. M. Snowden, "Small-signal characterization of microwave and millimeter-wave HEMT's based on a physical model," IEEE Trans. Microw. Theory Tech., vol. 44, no. 1, pp. 114-121, Jan. 1996.
27. J. S. Atherton, C. M. Snowden, and J. R. Richardson, "Characterization of thermal effects on microwave transistor performance using an efficient physical model," IEEE MTT-S Int. Microw. Symp. Dig., pp. 1181-1184, 1993.
28. P. J. Rudge, R. E. Miles, M. B. Steer, and C. M. Snowden, "Twotone intermodulation distortion simulations in the time domain using a quasi-2D physical pHEMT model," in IEEE MTT-S Int. Microw. Symp. Dig., May 2001, pp. 439-442.
29. G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, "A new method for determining the FET small signal equivalent circuit," IEEE Trans. Microw. Theory Tech., vol. 36, no. 7, pp. 1151-1159, Jul. 1988.
30. R. G. Johnson, W. Batty, A. J. Panks, and C. M. Snowden, "Fully physical coupled electro-thermal simulations and measurements of power FETs," in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2000, pp. 461-464