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Volumn 246, Issue 1-3, 2005, Pages 30-35

The energy distribution of the interface state density of SnO 2 /p-Si (1 1 1) heterojunctions prepared at different substrate temperatures by spray deposition method

Author keywords

Interface state energy distribution; MIS structure; SnO 2 p Si heterojunction; Spray deposition method

Indexed keywords

COSTS; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRONIC DENSITY OF STATES; HETEROJUNCTION BIPOLAR TRANSISTORS; SCHOTTKY BARRIER DIODES; SUBSTRATES; THERMAL EFFECTS;

EID: 17744395709     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.11.022     Document Type: Article
Times cited : (53)

References (24)
  • 13
    • 17744368157 scopus 로고    scopus 로고
    • Ph.D. Thesis, Ankara University, Graduate School Natural and Applied Sciences, Department of Engineering Physics, Ankara, Turkey (in Turkish)
    • S. Karadeniz, Ph.D. Thesis, Ankara University, Graduate School Natural and Applied Sciences, Department of Engineering Physics, Ankara, Turkey, 2001 (in Turkish).
    • (2001)
    • Karadeniz, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.