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Volumn 246, Issue 1-3, 2005, Pages 30-35
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The energy distribution of the interface state density of SnO 2 /p-Si (1 1 1) heterojunctions prepared at different substrate temperatures by spray deposition method
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Author keywords
Interface state energy distribution; MIS structure; SnO 2 p Si heterojunction; Spray deposition method
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Indexed keywords
COSTS;
CURRENT VOLTAGE CHARACTERISTICS;
DEPOSITION;
ELECTRONIC DENSITY OF STATES;
HETEROJUNCTION BIPOLAR TRANSISTORS;
SCHOTTKY BARRIER DIODES;
SUBSTRATES;
THERMAL EFFECTS;
INTERFACE STATE ENERGY DISTRIBUTION;
MIS STRUCTURE;
SNO2/P-SI HETEROJUNCTION;
SPRAY DEPOSITION METHOD;
SURFACE PHENOMENA;
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EID: 17744395709
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2004.11.022 Document Type: Article |
Times cited : (53)
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References (24)
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