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Semiconductor Science and Technology

Volumn 16, Issue 7, 2001, Pages 594-597

4H-SIC junction-barrier Schottky diodes with high forward current densities

(4) Tone, Kiyoshi a,b Zhao, Jian H a,b Weiner, Maurice a,b Pan, Menghan a,b

a RUTGERS UNIVERSITY (United States)

b UNITED SILICON CARBIDE INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; LEAKAGE CURRENTS; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; THERMAL EFFECTS;

FORWARD CURRENTS;

SCHOTTKY BARRIER DIODES;

EID: 0035399106 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/16/7/312 Document Type: Article

Times cited : (18)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.