The effects of treatment of Si(1 1 1) surfaces with NH 4 F solution on Schottky diode parameters

Applied Surface Science

Volumn 235, Issue 1-2, 2004, Pages 197-201

  Hadjersi, T ^a   Cheraga, H ^a   Chergui, W ^a  

^a L'Unite de Developpement de la Technologie du Silicium   (Algeria)

Author keywords

H terminated Si(1 1 1) surface; Schottky barrier; Semiconducting surfaces; Silicon

Indexed keywords

CHEMICAL BONDS; ELECTRIC RESISTANCE; OXIDATION; PARAMETER ESTIMATION; SCHOTTKY BARRIER DIODES; SILICON; SOLUTIONS; THIN FILMS;

BARRIER HEIGHTS; IDEALITY FACTOR; OXIDE LAYERS; SATURATED SOLUTIONS;

SURFACE TREATMENT;

EID: 4344648296     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.116     Document Type: Conference Paper

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