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Journal of Electronic Materials

Volumn 36, Issue 9, 2007, Pages 1149-1155

Passivation of surface and interface states in AlGaN/GaN HEMT structures by annealing

(5) Kim, Hyeongnam a Schuette, Michael L a Lee, Jaesun a Lu, Wu a Mabon, James C b

a The Ohio State University (United States)

b University of Illinois at Urbana Champaign (United States)

Author keywords

AlGaN GaN HEMT; Passivation; Post gate annealing; Surface interface states

Indexed keywords

POST-ANNEALING PROCESS; POST-GATE ANNEALING; SCHOTTKY BARRIER HEIGHTS;

ALUMINUM GALLIUM NITRIDE; CURRENT VOLTAGE CHARACTERISTICS; GALLIUM NITRIDE; INTERFACES (MATERIALS); PASSIVATION; SURFACE CHEMISTRY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34548222166 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-007-0189-2 Document Type: Article

Times cited : (14)

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