Post-annealing effects on trapping behaviors in AlGaN/GaN HEMTs

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 5, 2005, Pages 841-845

  Kim, H ^a   Lee, J ^a   Lu, W ^a  

^a The Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DISPERSION; POST-ANNEALING EFFECTS; PULSE WIDTHS; SCHOTTKY GATE FORMATION;

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; HIGH ELECTRON MOBILITY TRANSISTORS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 25444505035     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200461555     Document Type: Conference Paper

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