Effects of surface traps on breakdown voltage and switching speed of GaN power switching HEMTs

Technical Digest-International Electron Devices Meeting

Volumn , Issue , 2001, Pages 589-592

  Zhang, N Q ^a   Moran, B ^a   DenBaars, S P ^a   Mishra, U K ^a   Wang, X W ^b   Ma, T P ^b  

^a University of California   (United States)

^b YALE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; ELECTRON GAS; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; GALLIUM NITRIDE; GATES (TRANSISTOR); HETEROJUNCTIONS; MICROWAVE DEVICES; SWITCHING CIRCUITS; THERMAL CONDUCTIVITY;

ELECTRIC STRENGTH; MICROWAVE POWER DEVICES; POWER SWITCHING; SURFACE TRAPS; TWO DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035718184     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2001.979575     Document Type: Article

References (6)

1. High breakdown GaN HEMT with overlapping gate structure
2. Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
3. Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN
4. High-temperature performance of AlGaN/GaN HFET's on SiC substrate
5. High-quality oxide/nitride/oxide gate insulator for GaN MIS structures