Postprocessing annealing effects on direct current and microwave performance of AlGaN/GaN high electron mobility transistors

Applied Physics Letters

Volumn 85, Issue 13, 2004, Pages 2631-2633

  Lee, Jaesun ^a   Liu, Dongmin ^a   Kim, Hyeongnam ^a   Lu, Wu ^a  

^a Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVE POWER CHARACTERISTICS; OSCILLATION FREQUENCY; POSTANNEALING; SCHOTTKY CONTACTS;

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; ELECTRON GAS; GALLIUM NITRIDE; HETEROJUNCTIONS; LEAKAGE CURRENTS; METALLIZING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROWAVES; NUCLEATION; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 7544225781     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1797556     Document Type: Article

References (6)

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