Electro-thermal simulations of a microwave 4H-SiC MESFET on high purity semi-insulating substrate

Solid-State Electronics

Volumn 51, Issue 8, 2007, Pages 1144-1152

  Hjelmgren, Hans ^a   Andersson, Kristoffer ^a   Eriksson, Joakim ^a   Nilsson, Per Åke ^a   Südow, Mattias ^a   Rorsman, Niklas ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Field effect transistor; Microwave; Silicon carbide; Simulation

Indexed keywords

COMPUTER SIMULATION; INSULATING MATERIALS; MICROWAVES; SILICON CARBIDE; THERMAL EFFECTS;

ELECTRO-THERMAL SIMULATIONS; MICROWAVE POWER; SEMI-INSULATING SUBSTRATES;

MESFET DEVICES;

EID: 34547659295     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.06.013     Document Type: Article

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