SiC and GaN wide bandgap semiconductor materials and devices

Solid-State Electronics

Volumn 43, Issue 8, 1999, Pages 1459-1464

  Burk Jr , A A ^a   O'Loughlin, M J ^a   Siergiej, R R ^a   Agarwal, A K ^a   Sriram, S ^a   Clarke, R C ^a   MacMillan, M F ^a   Balakrishna, V ^a   Brandt, C D ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC PROPERTIES; HIGH TEMPERATURE APPLICATIONS; MESFET DEVICES; OPTOELECTRONIC DEVICES; POWER INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE; THERMODYNAMIC PROPERTIES; VAPOR PHASE EPITAXY;

DISLOCATION DENSITY; GALLIUM NITRIDE; MODULATION DOPED FIELD EFFECT TRANSISTORS; STATIC INDUCTION TRANSISTORS; WIDE BANDGAP SEMICONDUCTING MATERIALS;

MICROWAVE DEVICES;

EID: 0033176719     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00089-1     Document Type: Article

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