Electrical transport in n-type 4H silicon carbide

Journal of Applied Physics

Volumn 90, Issue 4, 2001, Pages 1869-1878

  Pernot, J ^a   Zawadzki, W ^a,b   Contreras, S ^a   Robert, J L ^a   Neyret, E ^a,c   Di Cioccio, L ^c  

^a CNRS   (France)

^b INSTITUTE OF PHYSICS   (Poland)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035881910     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1382849     Document Type: Article

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