An SiC MESFET-based MMIC process

IEEE Transactions on Microwave Theory and Techniques

Volumn 54, Issue 12, 2006, Pages 4072-4077

  Südow, Mattias ^b   Andersson, Kristoffer ^b   Billström, Niklas ^c   Grahn, Jan ^a,b   Hjelmgren, Hans ^b   Nilsson, Joakim ^c   Nilsson, Per Åke ^b   Ståhl, Johan ^c   Zirath, Herbert ^b   Rorsman, Niklas ^b  

^a IEEE

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^c SAAB AB   (Sweden)

Author keywords

High power; S band; SiC MESFET; SiC monolithic microwave integrated circuit (MMIC)

Indexed keywords

CAPACITORS; ELECTRIC INDUCTORS; MESFET DEVICES; MICROSTRIP DEVICES; MIM DEVICES; POWER AMPLIFIERS; SILICON CARBIDE;

MICROSTRIP TECHNOLOGY; PASSIVE COMPONENTS; SPIRAL INDUCTORS; THIN-FILM RESISTORS;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 33847760356     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2006.885563     Document Type: Article

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