Measurement of high-field electron transport in silicon carbide

IEEE Transactions on Electron Devices

Volumn 47, Issue 2, 2000, Pages 269-273

  Khan, Imran A ^a   Cooper Jr , James A ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; THERMAL EFFECTS;

ELECTRON DRIFT VELOCITY;

SILICON WAFERS;

EID: 0033886911     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.822266     Document Type: Article

References (5)

1. W. v. Müench and E. Pettenpaul, "Saturated electron drift velocity in 6H SiC," J. Appl. Phys.. vol. 48, pp. 4823-4825, 1977.
2. I. A. Khan and J. A. Cooper Jr., "Measurement of high field electron transport in silicon carbide," in Proc. 7th Int. Conf. Silicon Carbide and III-VNitrides (ICSCIII-N '97). Stockholm, Sweden, Sept. 5, 1997.
3. G. Rutsch et al., "Measurement of the Hall scattering factor in 4H-SiC epilayers from 40 K to 290 K and up to magnetic fields of nine tesla," in Proc. Materials Science Forum, vol. 517, 1998, pp. 264-268.
4. W. J. Schaffer et al., "Conductivity anisotropy in epitaxial 6H and 4H SiC," Materials Res. Soc. Proc.: Diamond, SiC, and Nitride Wide-Bandgap Semiconductors, vol. 339, pp. 596-600, 1994.
5. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York, NY: Wiley, 1981.