Fabrication and characterization of field-plated buried-gate SiC MESFETs

IEEE Electron Device Letters

Volumn 27, Issue 7, 2006, Pages 573-575

  Andersson, Kristoffer ^a   Südow, Mattias ^a   Nilsson, Per Åke ^a   Sveinbjörnsson, Einar ^a   Hjelmgren, Hans ^a   Nilsson, Joakim ^b   Ståhl, Johan ^b   Zirath, Herbert ^a   Rorsman, Niklas ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b Ericsson Microwave Systems AB   (Sweden)

Author keywords

Buried gate; Field plate (FP); Microwave power; Silicon carbide (SiC) MESFET

Indexed keywords

CHARACTERIZATION; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTANCE; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE;

BURIED-GATE; FIELD-PLATE (FP); MICROWAVE POWER;

MESFET DEVICES;

EID: 33745648501     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.877285     Document Type: Article

References (8)

1. N. Sghier, J.-M. Bluet, A. Souifi, G. Guillot, E. Morvan, and C. Brylinski, "Study of trapping phenomena in 4H-SiC MESFETs: Dependence on substrate purity," IEEE Trans. Electron Devices, vol. 50, no. 2, pp. 297-302, Feb. 2003.
2. H.-Y. Cha, C. I. Thomas, G. Koley, L. F. Eastman, and M. G. Spencer, "Reduced trapping effects and improved electrical performance in buried-gate 4H-SiC MESFETs," IEEE Trans. Electron Devices, vol. 50, no. 7, pp. 1569-1574, Jul. 2003.
3. H. Henry, G. Augustine, G. DeSalvo, R. B. R. C. Brooks, J. Oliver, A. Morse, B. Veasel, P. Esker, and R. Clarke, "S-band operation of SiC power MESFET with 20 W (4.4 W/mm) output power and 60% PAE," IEEE Trans. Electron Devices, vol. 51, no. 6, pp. 839-845, Jun. 2004.
4. C.-L. Chen, L. J. Mahoney, M. J. Manfra, F. W. Smith, D. H. Temme, and A. R. Calawa, "High-breakdown-voltage MESFET with a low-temperature-grown GaAs passivation layer and overlapping gate structure," IEEE Electron Device Lett., vol. 13, no. 6, pp. 335-337, Jun. 1992.
5. J. Li, S. Cai, G. Z. Pan, Y. L. Chen, C. Wen, and K. L. Wang, "High breakdown voltage GaN HFET with field-plate," Electron. Lett., vol. 37, no. 3, pp. 196-197, Feb. 2001.
6. W. Saito, M. Kuraguchi, Y. Takada, K. Tsuda, I. Omura, and T. Ogura, "Influence of surface defect charge at AlGaN-GaN-HEMT upon Schottky gate leakage current and breakdown voltage," IEEE Trans. Electron Devices, vol. 52, no. 2, pp. 159-164, Feb. 2005.
7. H.-Y. Cha, Y. C. Choi, L. F. Eastman, and M. G. Spencer, "Simulation study on breakdown behavior of field-plate SiC MESFETs," Int. J. High Speed Electron. Syst., vol. 14, no. 3, pp. 884-889, Sep. 2004.
8. N. Rorsman, P. Nilsson, J. Eriksson, K. Andersson, and H. Zirath, "Investigation of the scalability of 4H-SiC MESFETs for high frequency applications," Mater. Sci. Forum, vol. 457-460, no. 2, pp. 1229-1232, 2004.