Reduced trapping effects and improved electrical performance in buried-gate 4H-SiC MESFETs

IEEE Transactions on Electron Devices

Volumn 50, Issue 7, 2003, Pages 1569-1574

  Cha, Ho Young ^a   Thomas, C I ^a   Koley, G ^a   Eastman, Lester F ^a   Spencer, Michael G ^a  

^a Cornell University   (United States)

Author keywords

Buried gate; Current instability; SiC MESFET; Surface effects

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRON TUNNELING; SILICON CARBIDE;

CURRENT INSTABILITY;

MESFET DEVICES;

EID: 0042527393     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.814982     Document Type: Article

References (13)

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