Calculation of lattice heating in SiC RF power devices

Solid-State Electronics

Volumn 48, Issue 12, 2004, Pages 2103-2107

  Bertilsson, Kent ^a,b   Harris, C ^c   Nilsson, Hans Erik ^a  

^a MID SWEDEN UNIVERSITY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c Advanced Microwave Device Solutions   (Sweden)

Author keywords

Device modeling; MESFET; SiC; Thermal effects

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; ENERGY GAP; HEAT TRANSFER; MATHEMATICAL MODELS; MESFET DEVICES; MONTE CARLO METHODS; SILICON CARBIDE; THERMAL EFFECTS;

DEVICE MODELING; ELECTRICAL TRANSPORT; ELECTRO-THERMAL SIMULATIONS; LATTICE HEATING;

SOLID STATE DEVICES;

EID: 4544340583     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.08.001     Document Type: Article

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