Numerical simulation of small-signal microwave performance of 4H-SiC MESFET

Solid-State Electronics

Volumn 44, Issue 7, 2000, Pages 1281-1287

  Huang, Mingwei ^a   Mayergoyz, Isaak D ^a   Goldsman, Neil ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; FREQUENCY DOMAIN ANALYSIS; SEMICONDUCTING SILVER COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SILICON CARBIDE;

NON-IDEAL SCHOTTKY BOUNDARY CONDITIONS;

MESFET DEVICES;

EID: 0033742513     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00025-3     Document Type: Article

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