Measured Propagation Characteristics of Coplanar Waveguide on Semi-Insulating 4H-SiC Through 800 K

IEEE Microwave and Wireless Components Letters

Volumn 13, Issue 11, 2003, Pages 463-465

  Ponchak, George E ^a   Alterovitz, Samuel A ^a   Downey, Alan N ^a   Freeman, Jon C ^a   Schwartz, Zachary D ^a  

^a NASA GLENN RESEARCH CENTER   (United States)

Author keywords

Coplanar waveguide; Propagation characteristics; SiC; Transmission line

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC LINES; FREQUENCIES; MICROWAVES; SENSORS; SILICON CARBIDE; WIRELESS TELECOMMUNICATION SYSTEMS;

WIRELESS SENSORS;

WAVEGUIDES;

EID: 0242443773     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2003.819373     Document Type: Article

References (13)

1. A. C. Reyes, S. M. El-Ghazaly, S. Dorn, and M. Dydyk, "Temperature and bias effects in high resistivity silicon substrates," in 1996 IEEE MTT-S Int. Microwave Symp. Dig., June 17-21, 1996, pp. 87-90.
2. S. Bringhurst, M. F. Iskander, and M. J. White, "Thin-sample measurements and error analysis of high-temperature coaxial dielectric probes," IEEE Trans. Microwave Theory and Tech., vol. 45, pp. 2073-2083, Dec. 1997.
3. D. L. Gershon, J. P. Calame, Y. Carmel, T. M. Antonsen Jr., and R. M. Hutcheon, "Open-ended coaxial probe for high-temperature and broad-band dielectric measurements," IEEE Trans. Microwave Theory Tech., vol. 47, pp. 1640-1648, Sept. 1999.
4. R. C. Clarke, C. D. Brandt, S. Sriram, R. R. Siergiej, A. W. Morse, A. K. Agarwal, L. S. Chen, V. Balakrishna, and A. A. Burk, "Recent advances in high temperature, high frequency SiC devices," in Proc. 1998 High-Temperature Electronic Materials, Devices, and Sensors., San Diego. CA, Feb. 22-27, 1998, pp. 18-28.
5. S. T. Allen, W. L. Pribble, R. A. Sadler, T. S. Alcom, Z. Ring, and J. W. Palmour, "Invited-progress in high power SiC microwave MES-FETs," in IEEE MTT-S Int. Microwave Symp. Dig., June 13-19. 1999, pp. 321-324.
6. J. R. Jenny, J. Skowronski, W. C. Mitchel, H. M. Hobgood, R. C. Glass, G. Augustine, and R. H. Hopkins, "Deep level transient spectroscopic and Hall effect investigation of the position of the vandium acceptor level in 4H and 6H SiC," Appl. Phys. Lett., vol. 68, no. 14, pp. 1963-1965, Apr. 1996.
7. G. E. Ponchak, Z. D. Schwartz, S. A. Alterovitz, A. N. Downey, and J. C. Freeman, "Temperature dependence of attenuation of coplanar wave-guide on semi-insulating 4H-SiC through 540°," Electron. Lett., vol. 39, no. 6, pp. 535-536, Mar. 20, 2003.
8. Cree wafer number BV0302-11, Part Number W4TRD8R-0D00.
9. Z. D. Schwartz, A. N. Downey, S. A. Alterovitz, and G. E. Ponchak, "High-temperature probe station for use in microwave device characterization through 500°," in Proc. 61st ARFTG Microwave Measurements Conf. Dig., Philadelphia, PA, June 13, 2003.
10. R. B. Marks, "A multiline method of network analyzer calibration." IEEE Trans. Microwave Theory Tech., vol. 39, pp. 1205-1215, July 1991.
11. D. R. Lide, Ed., Handbook of Chemistry and Physics, 73rd ed. Boca Raton, FL: CRC, pp. 12-34.
12. P.O. Neudeck, The VLSI Handbook, W.-K. Chen, Ed. Boca Raton, FL: CRC, 2000, pp. 6-3.
13. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1981, pp. 22-31.