Microcrystalline silicon deposition: Process stability and process control

Thin Solid Films

Volumn 515, Issue 19 SPEC. ISS., 2007, Pages 7455-7459

  van den Donker, M N ^a   Kilper, T ^a   Grunsky, D ^a   Rech, B ^a   Houben, L ^a   Kessels, W M M ^b   van de Sanden, M C M ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Depth profiling; Microcrystalline silicon; Plasma processing and deposition; Solar cells

Indexed keywords

DEPTH PROFILING; PLASMA DEPOSITION; PLASMA HEATING; PROCESS CONTROL; RAMAN SPECTROSCOPY; SOLAR CELLS;

EMISSION INTENSITY; SELECTED AREA ELECTRON DIFFRACTION; SPATIAL EMISSION;

MICROCRYSTALLINE SILICON;

EID: 34547576928     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.11.119     Document Type: Article

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