High density fluorocarbon plasma etching of methylsilsesquioxane SiOC(H) low-k material and SiC(H) etch stop layer: Surface analyses and investigation of etch mechanisms

Journal of Physics D: Applied Physics

Volumn 40, Issue 13, 2007, Pages 3951-3959

  Eon, D ^a   Raballand, V ^a   Cartry, G ^a   Cardinaud, C ^a  

^a INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ETCHING; FLUOROCARBONS; SILICON CARBIDE; SURFACE ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS HYDROGENATED SILICON CARBIDE; CARBONACEOUS GROUPS; FLUOROCARBON TOP LAYERS;

PARAFFINS;

EID: 34547332706     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/13/007     Document Type: Article

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